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Trabalho de evento-anais periodico
Optical properties of GaAs/AlGaAs selectively doped quantum well structures (1998)
Tabata, A; Levine, A; Marti ceschin, A; Quivy, A. A.; Scolfaro, L M R; Enderlein, R; Leite, J. R.
Source: Radiation Effects & Defects in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
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ABNT
TABATA, A et al. Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 27 abr. 2024. , 1998
APA
Tabata, A., Levine, A., Marti ceschin, A., Quivy, A. A., Scolfaro, L. M. R., Enderlein, R., & Leite, J. R. (1998). Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. London: Gordon & Breach.
NLM
Tabata A, Levine A, Marti ceschin A, Quivy AA, Scolfaro LMR, Enderlein R, Leite JR. Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. 1998 ; 146 207-214.[citado 2024 abr. 27 ]
Vancouver
Tabata A, Levine A, Marti ceschin A, Quivy AA, Scolfaro LMR, Enderlein R, Leite JR. Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. 1998 ; 146 207-214.[citado 2024 abr. 27 ]
Artigo de periodico
Theory of luminescence spectra 'delta'-doping structures: application to GaAs (1998)
Sipahi, Guilherme Matos; Enderlein, R; Scolfaro, L M R; Leite, J. R.; Silva, E C F da; Levine, A
Source: Physical Review B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SIPAHI, Guilherme Matos et al. Theory of luminescence spectra 'delta'-doping structures: application to GaAs. Physical Review B, v. 57, n. 15, p. 9168-9178, 1998Tradução . . Acesso em: 27 abr. 2024.
APA
Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., Leite, J. R., Silva, E. C. F. da, & Levine, A. (1998). Theory of luminescence spectra 'delta'-doping structures: application to GaAs. Physical Review B, 57( 15), 9168-9178.
NLM
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR, Silva ECF da, Levine A. Theory of luminescence spectra 'delta'-doping structures: application to GaAs. Physical Review B. 1998 ; 57( 15): 9168-9178.[citado 2024 abr. 27 ]
Vancouver
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR, Silva ECF da, Levine A. Theory of luminescence spectra 'delta'-doping structures: application to GaAs. Physical Review B. 1998 ; 57( 15): 9168-9178.[citado 2024 abr. 27 ]
Trabalho de evento-anais periodico
Hole band structure of p-type delta-doping quantum wells in silicon (1998)
Rosa, A L; Scolfaro, L M R; Sipahi, Guilherme Matos; Enderlein, R; Leite, J. R.
Source: Microelectronic Engineering. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidades: IF, IME
Subjects: MATÉRIA CONDENSADA, ENGENHARIA AUTOMOBILÍSTICA
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ABNT
ROSA, A L et al. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 27 abr. 2024. , 1998
APA
Rosa, A. L., Scolfaro, L. M. R., Sipahi, G. M., Enderlein, R., & Leite, J. R. (1998). Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. Amsterdam: Elsevier Science.
NLM
Rosa AL, Scolfaro LMR, Sipahi GM, Enderlein R, Leite JR. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. 1998 ; 43-44 489-496.[citado 2024 abr. 27 ]
Vancouver
Rosa AL, Scolfaro LMR, Sipahi GM, Enderlein R, Leite JR. Hole band structure of p-type delta-doping quantum wells in silicon. Microelectronic Engineering. 1998 ; 43-44 489-496.[citado 2024 abr. 27 ]
Artigo de periodico
Reply to the comment on the paper density functional theory for holes in semiconductors (1998)
Enderlein, R; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
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ABNT
ENDERLEIN, R et al. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 27 abr. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, 80( 14), 3160.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 abr. 27 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 abr. 27 ]
Artigo de periodico
Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers (1998)
Levine, A; Silva, E C F da; Scolfaro, L M R; Beliaev, D; Quivy, A. A.; Enderlein, R; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Subjects: MATÉRIA CONDENSADA, QUÍMICA
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ABNT
LEVINE, A et al. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, v. 23, n. 2, p. 301-306, 1998Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf. Acesso em: 27 abr. 2024.
APA
Levine, A., Silva, E. C. F. da, Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1998). Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, 23( 2), 301-306. Recuperado de https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf
NLM
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.[citado 2024 abr. 27 ] Available from: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf
Vancouver
Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.[citado 2024 abr. 27 ] Available from: https://repositorio.usp.br/directbitstream/67d287aa-b1d5-4f32-b25b-33bb9ed40ccd/1-s2.0-S0749603696999929-main.pdf
Artigo de periodico
p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures (1998)
Rosa, A L; Scolfaro, L M R; Enderlein, R; Sipahi, Guilherme Matos; Leite, J. R.
Source: Physical Review B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ROSA, A L et al. p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures. Physical Review B, v. 58, n. 23, p. 15675-15687, 1998Tradução . . Acesso em: 27 abr. 2024.
APA
Rosa, A. L., Scolfaro, L. M. R., Enderlein, R., Sipahi, G. M., & Leite, J. R. (1998). p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures. Physical Review B, 58( 23), 15675-15687.
NLM
Rosa AL, Scolfaro LMR, Enderlein R, Sipahi GM, Leite JR. p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures. Physical Review B. 1998 ; 58( 23): 15675-15687.[citado 2024 abr. 27 ]
Vancouver
Rosa AL, Scolfaro LMR, Enderlein R, Sipahi GM, Leite JR. p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures. Physical Review B. 1998 ; 58( 23): 15675-15687.[citado 2024 abr. 27 ]
Trabalho de evento-resumo
Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon (1998)
Rosa, A L; Scolfaro, L M R; Enderlein, R; Sipahi, Guilherme Matos; Leite, J. R.
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ROSA, A L et al. Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon. 1998, Anais.. São Paulo: Sociedade Brasileira de Física, 1998. . Acesso em: 27 abr. 2024.
APA
Rosa, A. L., Scolfaro, L. M. R., Enderlein, R., Sipahi, G. M., & Leite, J. R. (1998). Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Rosa AL, Scolfaro LMR, Enderlein R, Sipahi GM, Leite JR. Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon. Resumos. 1998 ;[citado 2024 abr. 27 ]
Vancouver
Rosa AL, Scolfaro LMR, Enderlein R, Sipahi GM, Leite JR. Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon. Resumos. 1998 ;[citado 2024 abr. 27 ]
Artigo de periodico
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN' (1998)
Rodrigues, S C P; Rosa, A L; Scolfaro, Luísa Maria Ribeiro; Beliaev, Dmitri; Leite, J. R.; Enderlein, R; Alves, J L A
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
RODRIGUES, S C P et al. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, v. 13, p. 981-988, 1998Tradução . . Acesso em: 27 abr. 2024.
APA
Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, 13, 981-988.
NLM
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2024 abr. 27 ]
Vancouver
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2024 abr. 27 ]
Artigo de periodico
Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy (1998)
Soares, J A N T; Enderlein, R; Beliaev, D; Leite, J. R.; Saito, M
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: ENGENHARIA MECÂNICA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
SOARES, J A N T et al. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, v. 13, n. 12, p. 1418-1425, 1998Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/13/12/015. Acesso em: 27 abr. 2024.
APA
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015
NLM
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Vancouver
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Trabalho de evento-anais periodico
Surface reconstruction and MBE growth of cubic GaN on (001) GaAs: a total energy study (1998)
Silva, Juarez Lopes Ferreira da ; Enderlein, R; Scolfaro, L M R; Leite, J. R.; Tabata, A; Lischka, K; Schikora, D; Bechstedt, F
Source: Materials Science Forum. Conference titles: Silicon Carbide III Nitride and Related Materials. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SILVA, Juarez Lopes Ferreira da et al. Surface reconstruction and MBE growth of cubic GaN on (001) GaAs: a total energy study. Materials Science Forum. Zuerich: Trans Tech Publishing. . Acesso em: 27 abr. 2024. , 1998
APA
Silva, J. L. F. da, Enderlein, R., Scolfaro, L. M. R., Leite, J. R., Tabata, A., Lischka, K., et al. (1998). Surface reconstruction and MBE growth of cubic GaN on (001) GaAs: a total energy study. Materials Science Forum. Zuerich: Trans Tech Publishing.
NLM
Silva JLF da, Enderlein R, Scolfaro LMR, Leite JR, Tabata A, Lischka K, Schikora D, Bechstedt F. Surface reconstruction and MBE growth of cubic GaN on (001) GaAs: a total energy study. Materials Science Forum. 1998 ; 264-268 1197-1200.[citado 2024 abr. 27 ]
Vancouver
Silva JLF da, Enderlein R, Scolfaro LMR, Leite JR, Tabata A, Lischka K, Schikora D, Bechstedt F. Surface reconstruction and MBE growth of cubic GaN on (001) GaAs: a total energy study. Materials Science Forum. 1998 ; 264-268 1197-1200.[citado 2024 abr. 27 ]
Trabalho de evento-anais periodico
Stability of native defects in cubic boron nitride (1998)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R; Alves, H W Leite; Alves, J L A
Source: Radiation Effects and Defects in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
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ABNT
CASTINEIRA, J L P et al. Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. London: Gordon and Breach. . Acesso em: 27 abr. 2024. , 1998
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, H. W. L., & Alves, J. L. A. (1998). Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. London: Gordon and Breach.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves HWL, Alves JLA. Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. 1998 ; 146 49-63.[citado 2024 abr. 27 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves HWL, Alves JLA. Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. 1998 ; 146 49-63.[citado 2024 abr. 27 ]
Artigo de periodico
Fano-like electron-phonon interference in delta-doping GaAs superlattices (1998)
Pusep, Yuri A.; Silva, M T O; Galzerani, J C; Silva, S W da; Scolfaro, L M R; Enderlein, R; Quivy, A. A.; Lima, A. P.; Leite, J. R.
Source: Superlattices and Microstructures. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A. et al. Fano-like electron-phonon interference in delta-doping GaAs superlattices. Superlattices and Microstructures, v. 23, n. 5, p. 1033-1035, 1998Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/2a55523d-db8c-4fde-ab92-a6ff51119491/1-s2.0-S0749603696902207-main%20%281%29.pdf. Acesso em: 27 abr. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Silva, S. W. da, Scolfaro, L. M. R., Enderlein, R., et al. (1998). Fano-like electron-phonon interference in delta-doping GaAs superlattices. Superlattices and Microstructures, 23( 5), 1033-1035. Recuperado de https://repositorio.usp.br/directbitstream/2a55523d-db8c-4fde-ab92-a6ff51119491/1-s2.0-S0749603696902207-main%20%281%29.pdf
NLM
Pusep YA, Silva MTO, Galzerani JC, Silva SW da, Scolfaro LMR, Enderlein R, Quivy AA, Lima AP, Leite JR. Fano-like electron-phonon interference in delta-doping GaAs superlattices [Internet]. Superlattices and Microstructures. 1998 ; 23( 5): 1033-1035.[citado 2024 abr. 27 ] Available from: https://repositorio.usp.br/directbitstream/2a55523d-db8c-4fde-ab92-a6ff51119491/1-s2.0-S0749603696902207-main%20%281%29.pdf
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Silva SW da, Scolfaro LMR, Enderlein R, Quivy AA, Lima AP, Leite JR. Fano-like electron-phonon interference in delta-doping GaAs superlattices [Internet]. Superlattices and Microstructures. 1998 ; 23( 5): 1033-1035.[citado 2024 abr. 27 ] Available from: https://repositorio.usp.br/directbitstream/2a55523d-db8c-4fde-ab92-a6ff51119491/1-s2.0-S0749603696902207-main%20%281%29.pdf
Artigo de periodico
Parameters of the Kane model from effective masses: ambiguities and instabilities (1998)
Enderlein, R; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physica Status Solidi B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ENDERLEIN, R et al. Parameters of the Kane model from effective masses: ambiguities and instabilities. Physica Status Solidi B, v. 206, n. 2p. 623-633, 1998Tradução . . Acesso em: 27 abr. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Parameters of the Kane model from effective masses: ambiguities and instabilities. Physica Status Solidi B, 206( 2p. 623-633).
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Parameters of the Kane model from effective masses: ambiguities and instabilities. Physica Status Solidi B. 1998 ; 206( 2p. 623-633):[citado 2024 abr. 27 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Parameters of the Kane model from effective masses: ambiguities and instabilities. Physica Status Solidi B. 1998 ; 206( 2p. 623-633):[citado 2024 abr. 27 ]
Trabalho de evento-anais periodico
Optical characterization of GaAs/AlAs multiple quantum wells interfaces (1998)
Lemos, V; Sérgio, C. S.; Pimenta Lima, A; Quivy, A. A.; Enderlein, R; Leite, J. R.; Carvalho Junior, W
Source: Radiation Effects & Defects in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
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ABNT
LEMOS, V et al. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 27 abr. 2024. , 1998
APA
Lemos, V., Sérgio, C. S., Pimenta Lima, A., Quivy, A. A., Enderlein, R., Leite, J. R., & Carvalho Junior, W. (1998). Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach.
NLM
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2024 abr. 27 ]
Vancouver
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2024 abr. 27 ]
Artigo de periodico
Density functional theory for holes in semiconductors - replay (1998)
Enderlein, R; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
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ABNT
ENDERLEIN, R et al. Density functional theory for holes in semiconductors - replay. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 27 abr. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Density functional theory for holes in semiconductors - replay. Physical Review Letters, 80( 14), 3160.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density functional theory for holes in semiconductors - replay. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 abr. 27 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density functional theory for holes in semiconductors - replay. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 abr. 27 ]
Trabalho de evento-anais periodico
First principles studies of point defects and impurities in cubic boron nitride (1998)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R; Alves, J L A; Leite Alves, H W
Source: Materials Science & Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
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ABNT
CASTINEIRA, J L P et al. First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. Lausanne: Elsevier Sequoia. . Acesso em: 27 abr. 2024. , 1998
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Leite Alves, H. W. (1998). First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. Lausanne: Elsevier Sequoia.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Leite Alves HW. First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. 1998 ; 51( 1-3): 53-57.[citado 2024 abr. 27 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Leite Alves HW. First principles studies of point defects and impurities in cubic boron nitride. Materials Science & Engineering B. 1998 ; 51( 1-3): 53-57.[citado 2024 abr. 27 ]
Trabalho de evento-anais periodico
Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs (1998)
Tabata, A; Enderlein, R; Lima, A. P.; Leite, J. R.; Lemos, V; Kaiser, S; Schikora, D; Schoettker, B; Koehler, U; Lischka, K
Source: Materials Science Forum. Conference titles: Silicon Carbide III-Nitrides and Related Materials International Conference. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
TABATA, A et al. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications. . Acesso em: 27 abr. 2024. , 1998
APA
Tabata, A., Enderlein, R., Lima, A. P., Leite, J. R., Lemos, V., Kaiser, S., et al. (1998). Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications.
NLM
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370.[citado 2024 abr. 27 ]
Vancouver
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370.[citado 2024 abr. 27 ]
Trabalho de evento-resumo
Cálculo de primeiros princípios de defeitos nativos e impurezas em nitreto de boro cúbico (1998)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R
Source: Resumos. Conference titles: Encontro Nacional de Física Matéria Condensada. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CASTINEIRA, J L P et al. Cálculo de primeiros princípios de defeitos nativos e impurezas em nitreto de boro cúbico. 1998, Anais.. São Paulo: Sociedade Brasileira de Física, 1998. . Acesso em: 27 abr. 2024.
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., & Enderlein, R. (1998). Cálculo de primeiros princípios de defeitos nativos e impurezas em nitreto de boro cúbico. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R. Cálculo de primeiros princípios de defeitos nativos e impurezas em nitreto de boro cúbico. Resumos. 1998 ;[citado 2024 abr. 27 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R. Cálculo de primeiros princípios de defeitos nativos e impurezas em nitreto de boro cúbico. Resumos. 1998 ;[citado 2024 abr. 27 ]
Artigo de periodico
Minibands of p-type 'delta'-doping superlattices in GaAs (1997)
Ramos, L. E.; Sipahi, Guilherme Matos; Scolfaro, Luísa Maria Ribeiro; Enderlein, R; Leite, J. R.
Source: Superlattices and Microstructure. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAMOS, L. E. et al. Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure, v. 22, n. 4, p. 443-451, 1997Tradução . . Acesso em: 27 abr. 2024.
APA
Ramos, L. E., Sipahi, G. M., Scolfaro, L. M. R., Enderlein, R., & Leite, J. R. (1997). Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure, 22( 4), 443-451.
NLM
Ramos LE, Sipahi GM, Scolfaro LMR, Enderlein R, Leite JR. Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure. 1997 ; 22( 4): 443-451.[citado 2024 abr. 27 ]
Vancouver
Ramos LE, Sipahi GM, Scolfaro LMR, Enderlein R, Leite JR. Minibands of p-type 'delta'-doping superlattices in GaAs. Superlattices and Microstructure. 1997 ; 22( 4): 443-451.[citado 2024 abr. 27 ]
Artigo de periodico
Density Functional theory for Holes in Semiconductors (1997)
Enderlein, R; Sipahi, Guilherme Matos; Scolfaro, Luísa Maria Ribeiro; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ENDERLEIN, R et al. Density Functional theory for Holes in Semiconductors. Physical Review Letters, v. 79, n. 19, p. 3712-3715, 1997Tradução . . Disponível em: https://doi.org/10.1103/physrevlett.79.3712. Acesso em: 27 abr. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1997). Density Functional theory for Holes in Semiconductors. Physical Review Letters, 79( 19), 3712-3715. doi:10.1103/physrevlett.79.3712
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density Functional theory for Holes in Semiconductors [Internet]. Physical Review Letters. 1997 ; 79( 19): 3712-3715.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1103/physrevlett.79.3712
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density Functional theory for Holes in Semiconductors [Internet]. Physical Review Letters. 1997 ; 79( 19): 3712-3715.[citado 2024 abr. 27 ] Available from: https://doi.org/10.1103/physrevlett.79.3712

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